Metal to insulator transition in Ba2Ge2Te5: Synthesis, crystal structure, resistivity, thermal conductivity, and electronic structure

被引:7
作者
Jana, Subhendu [1 ]
Ishtiyak, Mohd [1 ]
Govindaraj, Lingannan [2 ]
Arumugam, Sonachalam [2 ]
Tripathy, Bikash [3 ]
Malladi, Sairam K. [3 ]
Niranjan, Manish K. [4 ]
Prakash, Jai [1 ]
机构
[1] Indian Inst Technol Hyderabad, Dept Chem, Sangareddy 502284, Telangana, India
[2] Bharathidasan Univ, Ctr High Pressure Res, Sch Phys, Tiruchirappalli 620024, Tamil Nadu, India
[3] Indian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, India
[4] Indian Inst Technol Hyderabad, Dept Phys, Sangareddy 502284, Telangana, India
关键词
chalcogenides; X-ray diffraction; electron microscopy; crystal structure; thermal conductivity; THERMOELECTRIC PERFORMANCE; QUATERNARY CHALCOGENIDES; GE; REFINEMENT; SERIES;
D O I
10.1016/j.materresbull.2021.111641
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A monophasic polycrystalline sample of Ba2Ge2Te5 has been synthesized for the first time using the sealed tube solid-state method. The Rietveld refinement of a polycrystalline Ba2Ge2Te5 and a single crystal X-ray diffraction study confirm that Ba2Ge2Te5 crystallizes in the orthorhombic polar C-2v(9)-Pna2(1) space group. Each of the Ge atoms in the Ba2Ge2Te5 structure is covalently connected to one Ge and three Te atoms making one-dimensional (1D) chains of 1 infinity [Ge2Te5](4-) that are separated by Ba2+ cations. The (Ba2+)(2)(Ge3+)(2)(Te2-)(5) can be charge-balanced as & INFIN; per the Zintl-Klemm concept. A resistivity study of Ba2Ge2Te5 shows a metallic behavior till 18 K below which metal to insulator transition was observed. Thermal conductivity of Ba2Ge2Te5 was found to decrease gradually on heating the sample with a minimum of about 0.41 Wm(-1)K(-1) at 773 K. The DFT studies predict semiconducting nature for Ba2Ge2Te5 with a narrow indirect bandgap of about 0.6 eV.
引用
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页数:10
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