The origin of dispersion of magnetoresistance of a domain wall spin valve

被引：3
作者：
Sato, Jun [1 ]
Matsushita, Katsuyoshi [1 ]
Imamura, Hiroshi [1 ]
机构：
[1] Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) | 2010年 / 200卷
关键词：
CPP-GMR SYSTEM; ACCUMULATION; RATIO;
D O I：
10.1088/1742-6596/200/6/062023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nanocontact which is experimentally fabricated as current-confined-path (CCP) structure in a nano-oxide-layer (NOL). We solve the non-collinear spin diffusion equation by using the finite element method and calculate the MR ratio by evaluating the additional voltage drop due to the spin accumulation. We investigate the origin of dispersion of magnetoresistance by considering the effect of randomness of the size and distribution of the nanocontacts in the NOL. It is observed that the effect of randomness of the contact size is much larger than that of the contact distribution. Our results suggest that the origin of dispersion of magnetoresistance observed in the experiments is the randomness of the size of the nanocontacts in the NOL.
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页数：4
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