Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers

被引：0

作者：

Riddet, C. ^{[1
]}

Watling, J. R. ^{[1
]}

Chan, K. H. ^{[1
]}

Asenov, A. ^{[1
]}

De Jaeger, Brice ^{[2
]}

Mitard, Jerome ^{[2
]}

Meuris, Marc ^{[2
]}

机构：

[1] Univ Glasgow, Device Modelling Grp, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] IMEC, B-3001 Heverlee, Belgium

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

基金：

英国工程与自然科学研究理事会;

关键词：

Monte Carlo; germanium; pMOSFET; surface roughness scattering; full band; high-kappa; SURFACE-ROUGHNESS SCATTERING; ELECTRON-TRANSPORT; SILICON; MODEL; TEMPERATURE; VARIABILITY; IMPACT; STATE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k.p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.

引用

页码：239 / 242

页数：4

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