Development of custom radiation-tolerant DCDC converter ASICs

被引：17

作者：

Faccio, F. ^{[1
]}

Michelis, S. ^{[1
,2
]}

Orlandi, S. ^{[1
]}

Blanchot, G. ^{[1
]}

Fuentes, C. ^{[1
,3
]}

Saggini, S. ^{[4
]}

Ongaro, F. ^{[4
]}

机构：

[1] CERN PH Dept, CH-1211 Geneva 23, Switzerland

[2] Ecole Polytech Fed Lausanne, STI IEL ELab, CH-1015 Lausanne, Switzerland

[3] UTFSM, Valparaiso, Chile

[4] Univ Udine, DIEGM, I-33100 Udine, Italy

来源：

JOURNAL OF INSTRUMENTATION | 2010年 / 5卷

关键词：

Voltage distributions; Radiation-hard electronics; Radiation damage to electronic components;

D O I：

10.1088/1748-0221/5/11/C11016

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Based on a detailed study of the radiation tolerance of high-voltage transistors, 2 commercial CMOS technologies have been selected for the design of synchronous buck DCDC converter ASICs. Three prototype converters have been produced, embedding increasingly sophisticated functions. The electrical and radiation performance of these prototypes is presented.

引用

页数：7

共 4 条

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Faccio, Federico ;

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MICROELECTRONICS RELIABILITY, 2008, 48 (07) :1000-1007

[2] TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters [J].

Faccio, Federico ;

Allongue, B. ;

Blanchot, G. ;

Fuentes, C. ;

Michelis, S. ;

Orlandi, S. ;

Sorge, R. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) :1790-1797

[3] Power distribution with custom DC-DC converters for SLHC trackers [J].

Fuentes, C. ;

Allongue, B. ;

Buso, S. ;

Blanchot, G. ;

Faccio, F. ;

Michelis, S. ;

Orlandi, S. ;

Spiazzi, G. .

2009 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-5, 2009, :1300-+

[4]

MICHELIS S, 2010, P ESSCIRC 2010 C SEV

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