Effect of Dopant Concentration on the Pore Formation of Porous Silicon on N-Type Silicon

被引：0
|
作者：
Nadia, Siti [1 ]
Ali, Nihad K. [1 ,2 ]
Ahmad, Mohd Ridzuan [1 ]
Haidary, Sazan M. [3 ]
机构：
[1] Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia
[2] Soran Univ, Fac Sci & Engn, Erbil, Iraq
[3] Univ Teknol Malaysia, Fac Biosci & Med Engn, Skudai, Johor, Malaysia
来源：
2014 IEEE 5TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP) | 2014年
关键词：
Dopant; Concentration; N-Type Silicon; Porous; FORMATION MECHANISMS; SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigated the effect of different doped n-type silicon on pores formation. We found that star-like shape pores occurred when low doped concentration n-type silicon sample was used while high doped concentration produced normal pores hole-shape on the surface. By increasing etching time will cause the neighbouring star-like shape branches to combine and produced bigger pores. Reasons related on this star-like shape pores formation such as the effect of materials impurities, dynamic stress and space charge region effect (SCR) were discussed.
引用
收藏
页码：53 / 55
页数：3
相关论文
共 50 条
  • [41] P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS
    ELLIS, WC
    SCAFF, JH
    ROBERTSON, WD
    STAUSS, HE
    BLOOM, MC
    JOURNAL OF METALS, 1950, 2 (08): : 1027 - 1027
  • [42] P-TYPE AND N-TYPE SILICON AND THE FORMATION OF THE PHOTOVOLTAIC BARRIER IN SILICON INGOTS
    SCAFF, JH
    THEUERER, HC
    SCHUMACHER, EE
    TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1949, 185 (06): : 383 - 388
  • [43] EFFECT OF RANDOM VARIATION IN IMPURITY CONCENTRATION ON FERMI LEVEL IN N-TYPE SILICON
    DEBROY, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : K147 - K149
  • [44] ANISOTROPIC VOIGT EFFECT IN N-TYPE SILICON
    SRIVASTAVA, GP
    KOTHARI, PC
    PHYSICA, 1973, 63 (03): : 570 - 576
  • [45] INFLUENCE OF IRRADIATION TEMPERATURE AND OF NATURE OF DOPANT ON FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON
    VAVILOV, VS
    GLAZMAN, VB
    ISAEV, NU
    MUKASHEV, BN
    SPITSYN, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 303 - 305
  • [46] Effect of silicon interstitials on Cu precipitation in n-type Czochralski silicon
    Wang, Weiyan
    Yang, Deren
    Ma, Xiangyang
    Que, Duanlin
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
  • [47] Macroporous silicon formation by electrochemical anodization of n-type silicon without illumination
    Fulton, Alison Joy
    Kollath, Vinayaraj Ozhukil
    Karan, Kunal
    Shi, Yujun
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (09)
  • [48] Macropore formation on highly doped n-type silicon
    Christophersen, M
    Cartensen, J
    Föll, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01): : 45 - 50
  • [49] Macropore formation on highly doped n-type silicon
    Christophersen, M.
    Carstensen, J.
    Föll, H.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 45 - 50
  • [50] RAMAN-SCATTERING AND PHOTOLUMINESCENCE STUDY OF POROUS SILICON FORMED ON N-TYPE SILICON
    DEB, SK
    MATHUR, N
    ROY, AP
    BANERJEE, S
    SARDESAI, A
    BULLETIN OF MATERIALS SCIENCE, 1994, 17 (05) : 505 - 511
12345