Effect of Dopant Concentration on the Pore Formation of Porous Silicon on N-Type Silicon

被引：0
|
作者：
Nadia, Siti [1 ]
Ali, Nihad K. [1 ,2 ]
Ahmad, Mohd Ridzuan [1 ]
Haidary, Sazan M. [3 ]
机构：
[1] Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia
[2] Soran Univ, Fac Sci & Engn, Erbil, Iraq
[3] Univ Teknol Malaysia, Fac Biosci & Med Engn, Skudai, Johor, Malaysia
来源：
2014 IEEE 5TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP) | 2014年
关键词：
Dopant; Concentration; N-Type Silicon; Porous; FORMATION MECHANISMS; SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigated the effect of different doped n-type silicon on pores formation. We found that star-like shape pores occurred when low doped concentration n-type silicon sample was used while high doped concentration produced normal pores hole-shape on the surface. By increasing etching time will cause the neighbouring star-like shape branches to combine and produced bigger pores. Reasons related on this star-like shape pores formation such as the effect of materials impurities, dynamic stress and space charge region effect (SCR) were discussed.
引用
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页码：53 / 55
页数：3
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