Effect of Dopant Concentration on the Pore Formation of Porous Silicon on N-Type Silicon

被引：0
|
作者：
Nadia, Siti [1 ]
Ali, Nihad K. [1 ,2 ]
Ahmad, Mohd Ridzuan [1 ]
Haidary, Sazan M. [3 ]
机构：
[1] Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia
[2] Soran Univ, Fac Sci & Engn, Erbil, Iraq
[3] Univ Teknol Malaysia, Fac Biosci & Med Engn, Skudai, Johor, Malaysia
来源：
2014 IEEE 5TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP) | 2014年
关键词：
Dopant; Concentration; N-Type Silicon; Porous; FORMATION MECHANISMS; SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigated the effect of different doped n-type silicon on pores formation. We found that star-like shape pores occurred when low doped concentration n-type silicon sample was used while high doped concentration produced normal pores hole-shape on the surface. By increasing etching time will cause the neighbouring star-like shape branches to combine and produced bigger pores. Reasons related on this star-like shape pores formation such as the effect of materials impurities, dynamic stress and space charge region effect (SCR) were discussed.
引用
收藏
页码：53 / 55
页数：3
相关论文
共 50 条
  • [1] MECHANISM OF PORE FORMATION ON N-TYPE SILICON
    ZHANG, XG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (12) : 3750 - 3756
  • [2] Photocarrier Promoted Pore and Inverted Pyramid Formation in Porous Silicon Films on n-Type Silicon
    Wang, Fuguo
    Zhang, Minzhen
    Zhao, Guoting
    Cheng, Jinchun
    Zhang, Junyan
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (03) : P32 - P36
  • [3] Pore morphology and the mechanism of pore formation in n-type silicon
    1600, (72):
  • [4] PORE MORPHOLOGY AND THE MECHANISM OF PORE FORMATION IN N-TYPE SILICON
    SEARSON, PC
    MACAULAY, JM
    ROSS, FM
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 253 - 258
  • [5] Thermoelectric performance in n-type bulk silicon: The influence of dopant concentration and dopant species
    Bennett, Nick S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (07):
  • [6] Controllable formation of porous structures on n-type silicon
    Prokaznikov, AV
    Buchin, EY
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 5-6 : 47 - 52
  • [7] Structural and optical properties of n-type porous silicon - Effect of HF concentration
    Jeyakumaran, N.
    Natarajan, B.
    Ramamurthy, S.
    Vasu, V.
    SURFACE REVIEW AND LETTERS, 2007, 14 (02) : 293 - 300
  • [8] TRANSIENT PROCESSES DURING PORE FORMATION IN N-TYPE SILICON
    VINKE, AL
    KURBATOV, DA
    MOKROUSOV, NE
    PROKAZNIKOV, AV
    RUSSIAN ELECTROCHEMISTRY, 1993, 29 (08): : 1172 - 1176
  • [9] Formation of Porous Silicon: Mechanism of Macropores Formation in n-Type Si
    Rusli, Nurul Izni
    Abidin, Mastura Shafinaz Zainal
    Astuti, Budi
    Ali, Nihad K.
    Hashim, Abdul Manaf
    SAINS MALAYSIANA, 2013, 42 (05): : 643 - 648
  • [10] Regular pore formation in n-type crystalline silicon for photonic applications
    Sasilala, G
    Cerullo, F
    La Ferrara, V
    Lancellotti, L
    Wilde, PM
    Boeck, T
    Di Francia, G
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1171 - 1174
12345