Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

被引：4

作者：

Vanacore, Giovanni Maria ^{[1
,2
]}

Zani, Maurizio ^{[1
,2
]}

Bollani, Monica ^{[3
]}

Colombo, Davide ^{[4
,5
]}

Isella, Giovanni ^{[4
,5
]}

Osmond, Johann ^{[4
,5
,6
]}

Sordan, Roman ^{[4
,5
]}

Tagliaferri, Alberto ^{[1
,2
]}

机构：

[1] Politecn Milan, CNISM, I-20133 Milan, Italy

[2] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

[3] CNR, Ist Foton & Nanotecnol, I-22100 Como, Italy

[4] Politecn Milan, CNISM, I-22100 Como, Italy

[5] Politecn Milan, Dipartimento Fis, LNESS, I-22100 Como, Italy

[6] Kansai Photon Sci Inst, Barcelona 08860, Spain

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 12期

关键词：

SiGe islands; Ordering; Pit-patterned Si surface; Nucleation; Diffusion; Growth dynamics; TRANSITION; PYRAMIDS; DOMES; DOTS; GE;

D O I：

10.1007/s11671-010-9781-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe, as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands as a function of the Ge coverage has been studied by coupling atomic force microscopy scans with Auger spectro-microscopy data. Our observations are consistent with a physical scenario where island positioning is essentially driven by energetic factors, which predominate with respect to the local kinetics of diffusion, and the growth evolution mainly depends on the local density of Ge atoms.

引用

页码：1921 / 1925

页数：5

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