Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

被引：13

作者：

Minetto, Andrea ^{[1
,2
]}

Modolo, Nicola ^{[3
]}

Sayadi, Luca ^{[1
]}

Koller, Christian ^{[4
]}

Ostermaier, Clemens ^{[1
]}

Meneghini, Matteo ^{[3
]}

Zanoni, Enrico ^{[3
]}

Prechtl, Gerhard ^{[1
]}

Sicre, Sebastien ^{[1
]}

Deutschmann, Bernd ^{[2
]}

Haberlen, Oliver ^{[1
]}

机构：

[1] Infineon Technol Austria AG, A-9500 Villach, Austria

[2] Graz Univ Technol, Inst Elect, A-8010 Graz, Austria

[3] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[4] KAI GmbH, A-9524 Villach, Austria

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 10期

关键词：

Stress; HEMTs; MODFETs; Degradation; Logic gates; Wide band gap semiconductors; Transient analysis; Dynamic effects; gallium nitride; hard-switching (HSW); high-electron-mobility transistor (HEMT); hot electrons (HEs); hydrodynamic (HD) simulations; semi-ON; HOT-ELECTRON; CURRENT COLLAPSE; SIMULATION; VOLTAGE; DC;

D O I：

10.1109/TED.2021.3101182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an analysis of the impact of drain field plate (FP) length on the semi- ON degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD) hydrodynamic simulations show that a time and field-dependent hot electrons (HEs) trapping takes place at the passivation/barrier interface. The higher drain current decrease in the longer FP samples can be ascribed to an enhanced HE trapping at the drain FP edge due to a different electric field distribution.

引用

页码：5003 / 5008

页数：6

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