Tunable polarization of spin polarized current by magnetic field

被引：1

作者：

Joo, Sungjung ^{[1
]}

Lee, Jinseo ^{[1
]}

Kim, Taeyueb ^{[1
]}

Rhie, Kungwon ^{[1
]}

Hong, Jinki ^{[1
]}

Shin, Kyung-Ho ^{[2
]}

Kim, Ki Hyun ^{[3
]}

机构：

[1] Korea Univ, Dept Phys, Yunki Kun 339700, Chochiwon, South Korea

[2] KIST, Ctr Spintron Res, Seoul 130650, South Korea

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期

关键词：

Spin polarization; Spin-flip; g-factor; Zeeman; HgCdTe; HGTE QUANTUM-WELLS; RESONANT SCATTERING; MAGNETORESISTANCE; GERMANIUM;

D O I：

10.1016/j.cap.2010.09.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin polarization of a high g-factor bulk semiconductor is theoretically investigated in the presence of a magnetic field parallel to a driving electric field. Calculations have been carried out using the energydependent relaxation time approximation in association with spin-flip scattering. As the magnitude of the magnetic field increases, the spin-polarized current alternates between the spin-up and spin-down states for the low spin-scattering system. This implies that the current polarization can be tuned by controlling the magnetic field strength, suggesting possible applications to spintronic devices. An experimental method for investigating alternative current polarization is also considered. @ 2010 Elsevier B.V. All rights reserved.

引用

页码：568 / 572

页数：5

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