SiC Integrated Circuit Control Electronics for High-Temperature Operation

被引：55

作者：

Alexandru, Mihaela ^{[1
]}

Banu, Viorel ^{[2
]}

Jorda, Xavier ^{[2
]}

Montserrat, Josep ^{[2
]}

Vellvehi, Miquel ^{[2
]}

Tournier, Dominique ^{[1
]}

Millan, Jose ^{[2
]}

Godignon, Philippe ^{[2
]}

机构：

[1] IMB CNM Barcelona, Barcelona 08193, Spain

[2] Natl Ctr Microelect Barcelona IMB CNM CSIC, Barcelona 08193, Spain

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2015年 / 62卷 / 05期

关键词：

Digital integrated circuits (ICs); driver; high density; high power; high temperature; integrated circuits; MESFET; mixed signal; silicon carbide (SiC); voltage reference;

D O I：

10.1109/TIE.2014.2379212

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

引用

页码：3182 / 3191

页数：10

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