Towards Amplifier Design with a SiC Graphene Field-Effect Transistor

被引：0
|
作者：
Aguirre-Morales, J. D. [1 ]
Fregonese, S. [1 ]
Dwivedi, A. D. D. [1 ]
Zimmer, T. [1 ]
Khenissa, M. S. [2 ]
Belhaj, M. M. [2 ]
Happy, H. [2 ]
机构：
[1] Univ Bordeaux, CNRS, IMS Lab UMR 5218, Talence, France
[2] Univ Lille, IEMN Lab, CNRS UMR 8520, Lille, France
来源：
2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2015年
关键词：
Amplifier; Compact Model; Field-Effect Transistor; Graphene; SiC;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.
引用
收藏
页码：93 / 96
页数：4
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