Efficient top-emitting organic light-emitting devices using Fe3O4 modified Ag anode

被引：16

作者：

Zhang, Dan-Dan ^{[1
]}

Feng, Jing ^{[1
]}

Zhong, Yu-Qing ^{[1
]}

Liu, Yue-Feng ^{[1
]}

Wang, Hai ^{[1
,2
]}

Jin, Yu ^{[1
]}

Bai, Yu ^{[1
]}

Chen, Qi-Dai ^{[1
]}

Sun, Hong-Bo ^{[1
,2
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 12期

关键词：

Top-emitting organic light-emitting devices; Fe3O4; Anodic buffer; SEMICONDUCTOR; OXIDE; METAL;

D O I：

10.1016/j.orgel.2010.08.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly efficient top-emitting organic light-emitting devices (TOLEDs) using a Fe3O4 modified Ag anode have been demonstrated. The tris-(8-hydroxyquinoline) aluminum-based TOLEDs exhibit a very low turn-on voltage of 2.5 V and a high current efficiency of 8.1 cd/A. The improved properties for the TOLEDs is mainly due to the enhanced hole injection by introducing the anodic buffer. The mechanism of this enhanced hole injection is studied by the X-ray and ultra-violet photoemission spectroscopy, which demonstrated that the dipole layer is formed at the anode/organic interface and the hole-injection barrier is therefore reduced after introducing the thin Fe3O4 film between the Ag anode and the hole-transport layer. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：1891 / 1895

页数：5

共 17 条

[1] MoOx modified Ag anode for top-emitting organic light-emitting devices [J].