Impedance spectroscopy of porous silicon layers

被引：0

作者：

Shportenko, Andrey ^{[1
]}

Starkov, Vitaly ^{[2
]}

Gosteva, Ekaterina ^{[1
]}

Volkov, Vladimir ^{[2
]}

机构：

[1] MISIS Natl Univ Sci & Technol, Moscow, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka, Russia

来源：

2021 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) | 2021年

关键词：

Impedance spectroscopy; porous silicon layers; GPSi-var structure;

D O I：

10.1109/3M-NANO49087.2021.9599783

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The features of the behavior of the impedance characteristics of porous silicon layers are studied.

引用

页码：445 / 448

页数：4

共 9 条

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