Impedance spectroscopy of porous silicon layers

被引：0
|
作者：
Shportenko, Andrey [1 ]
Starkov, Vitaly [2 ]
Gosteva, Ekaterina [1 ]
Volkov, Vladimir [2 ]
机构：
[1] MISIS Natl Univ Sci & Technol, Moscow, Russia
[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka, Russia
来源：
2021 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) | 2021年
关键词：
Impedance spectroscopy; porous silicon layers; GPSi-var structure;
D O I：
10.1109/3M-NANO49087.2021.9599783
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The features of the behavior of the impedance characteristics of porous silicon layers are studied.
引用
收藏
页码：445 / 448
页数：4
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