Photocurrent Enhancement Induced By Interface Modifications Due To Low Dose Electron Irradiation Of Amorphous/Crystalline Silicon Heterojunctions

被引：0

作者：

Neitzert, Heinz-Christoph ^{[1
]}

Ferrara, Manuela ^{[1
]}

Fahrner, Wolfgang ^{[2
]}

Scherff, Maximilian ^{[2
]}

Klaver, Arjen ^{[3
]}

van Swaaij, Rene ^{[3
]}

机构：

[1] Univ Salerno, DIIIE, Via Ponte Don Melillo 1, I-84084 Fisciano, SA, Italy

[2] Univ Hagen, Chair Elect Devices, D-58084 Hagen, Germany

[3] Delft Univ Technol, DIMES ECTM, CH-2600 GB Delft, Netherlands

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

Silicon; heterojunction; solar cell; electron irradiation; SOLAR-CELL; DAMAGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of n-type amorphous silicon/p-type crystalline silicon solar cells has been exposed to different fluences of 1MeV electrons. For intermediate fluences up to 1.10(13) electrons/cm(2), an enhancement of the spectral response at shorter wavelengths and a increase of the short circuit current has been observed, while for higher fluences the usual device degradation due to the decrease of the charge carrier diffusion length in the crystalline silicon base after irradiation has been found.

引用

页码：17 / +

页数：2

共 4 条

[1]

CLAEYS C, 2003, RAD EFFECTS ADV SEMI, P58

[2] Present status of intermediate band solar cell research [J].

Cuadra, L ;

Martí, A ;

Luque, A .

THIN SOLID FILMS, 2004, 451 :593-599

[3] Investigation of the damage as induced by 1.7 MeV protons in an amorphous/crystalline silicon heterojunction solar cell [J].

Neitzert, HC ;

Spinillo, P ;

Bellone, S ;

Licciardo, GD ;

Tucci, M ;

Roca, F ;

Gialanella, L ;

Romano, M .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 83 (04) :435-446

[4] DAMAGE CORRELATIONS IN SEMICONDUCTORS EXPOSED TO GAMMA-RADIATION, ELECTRON-RADIATION AND PROTON-RADIATION [J].

SUMMERS, GP ;

BURKE, EA ;

SHAPIRO, P ;

MESSENGER, SR ;

WALTERS, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1372-1379

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