Metal induced crystallization: Gold versus aluminium

被引：9

作者：

Pereira, L

Aguas, H

Vilarinho, P

Fortunato, E

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, P-2829516 Caparica, Portugal

[2] CEMOP, P-2829516 Caparica, Portugal

[3] Univ Aveiro, CICECO, Dept Engn Ceram & Vidro, P-3810193 Aveiro, Portugal

来源：

JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 06期

关键词：

D O I：

10.1007/s10853-005-0571-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500 degrees C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500 degrees C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium. (C) 2005 Springer Science + Business Media, Inc.

引用

收藏

页码：1387 / 1391

页数：5

相关论文

共 11 条

[1] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].

Bruggeman, DAG .

ANNALEN DER PHYSIK, 1935, 24 (07) :636-664

[2] GOLD DIFFUSION IN CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON [J].

CALCAGNO, L ;

CAMPISANO, SU ;

COFFA, S .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1874-1876

[3] CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION [J].

HULTMAN, L ;

ROBERTSSON, A ;

HENTZELL, HTG ;

ENGSTROM, I ;

PSARAS, PA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3647-3655

[4] SURFACE ENERGY OF GERMANIUM AND SILICON [J].

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527

[5] Thin-film c-Si solar cells prepared by metal-induced crystallization [J].

Muramatsu, SI ;

Minagawa, Y ;

Oka, F ;

Sasaki, T ;

Yazawa, Y .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 74 (1-4) :275-281

[6] Aluminium-induced crystallisation of silicon on glass for thin-film solar cells [J].

Nast, O ;

Brehme, S ;

Pritchard, S ;

Aberle, AG ;

Wenham, SR .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :385-392

[7] Polycrystalline silicon obtained by metal induced crystallization using different metals [J].

Pereira, L ;

Aguas, H ;

Martins, RMS ;

Vilarinho, P ;

Fortunato, E ;

Martins, R .

THIN SOLID FILMS, 2004, 451 :334-339

[8] Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition [J].

Petrik, P ;

Lohner, T ;

Fried, M ;

Biró, LP ;

Khánh, NQ ;

Gyulai, J ;

Lehnert, W ;

Schneider, C ;

Ryssel, H .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1734-1742

[9] CRYSTALLIZATION OF AMORPHOUS-SILICON BY RECONSTRUCTIVE TRANSFORMATION UTILIZING GOLD [J].

STOEMENOS, J ;

MCINTOSH, J ;

ECONOMOU, NA ;

BHATNAGAR, YK ;

COXON, PA ;

LOWE, AJ ;

CLARK, MG .

APPLIED PHYSICS LETTERS, 1991, 58 (11) :1196-1198

[10] Metal-induced crystallization of amorphous silicon [J].

Yoon, SY ;

Park, SJ ;

Kim, KH ;

Jang, J .

THIN SOLID FILMS, 2001, 383 (1-2) :34-38