In situ investigation of M/CuO interface (M is Ti, V, Cr or Mn) by X-ray photoelectron spectroscopy

被引:4
作者
Chourasia, A. R. [1 ]
Stahl, Jacob [1 ]
机构
[1] Texas A&M Univ, Dept Phys & Astron, Commerce, TX 75429 USA
来源
MODERN PHYSICS LETTERS B | 2015年 / 29卷 / 04期
关键词
Copper oxide; titanium; vanadium; chromium; manganese; thin films; X-ray photoelectron spectroscopy; METAL-INSULATOR-TRANSITION; CHROMIUM-OXIDE FILMS; THIN-FILMS; OPTICAL-PROPERTIES; TITANIUM-DIOXIDE; VANADIUM-OXIDE; MANGANESE; COPPER; NANOTUBES; ELECTRODES;
D O I
10.1142/S0217984915300021
中图分类号
O59 [应用物理学];
学科分类号
摘要
The technique of X-ray photoelectron spectroscopy has been used to investigate the chemical reactivity at the metal/CuO interfaces. Thin films of the metallic overlayer (0.5 nm, 1.0 nm and 2.0 nm thickness) were deposited on copper oxide substrates at room temperature. In situ characterization of the interfaces has been performed. The 2p core level regions of the metals have been investigated. The spectral features show considerable reactivity at the interfaces. The core level peaks of the metal are observed to be shifted to the high BE energy side with the appearance of satellites. The spectral data confirm the formation of the metallic oxide at the interface. The satellite structure in the copper region is observed to disappear and the spectral features are found to approach those of elemental copper. The room temperature deposition of the metal on copper oxide therefore results in the reduction of copper oxide to elemental copper followed by the oxidation of the metal. The interface is found to consist of a mixture of metal oxide and elemental copper. The 2.0 nm samples were annealed. These samples show the diffusion of copper oxide through the overlayer. The metal reacts with this diffusing oxide to form metallic oxide. The interface is found to consist of a mixture of unreacted metal, the metal oxide, and elemental copper. The amount of the unreacted metal varied between 0% and 40% and can be controlled by the processing conditions. The investigation shows room temperature chemical reactivity at the metal/CuO interface and provides a new method of preparing sub-nano-oxide films.
引用
收藏
页数:14
相关论文
共 50 条
[41]   Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy [J].
Menon, M. R. Rajesh ;
Mancini, A. ;
Kartha, C. Sudha ;
Vijayakumar, K. P. ;
Santoni, A. .
THIN SOLID FILMS, 2012, 520 (18) :5856-5859
[42]   Electrocatalytic Enhancement of CO Methanation at the Metal-Electrolyte Interface Studied Using In Situ X-ray Photoelectron Spectroscopy [J].
Thurner, Christoph W. ;
Haug, Leander ;
Winkler, Daniel ;
Griesser, Christoph ;
Leitner, Matthias ;
Moser, Toni ;
Werner, Daniel ;
Thaler, Marco ;
Scheibel, Lucas A. ;
Goetsch, Thomas ;
Carbonio, Emilia ;
Kunze-Liebhaeuser, Julia ;
Portenkirchner, Engelbert ;
Penner, Simon ;
Kloetzer, Bernhard .
C-JOURNAL OF CARBON RESEARCH, 2023, 9 (04)
[43]   Investigation of the influence of a commercial glass protector on float glass surfaces by x-ray photoelectron spectroscopy [J].
Reiss, Stephanie ;
Urban, Sabine ;
Jacob, Katrin ;
Krischok, Stefan ;
Raedlein, Edda .
PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2017, 58 (03) :99-108
[44]   Investigation of polydopamine coatings by X-ray Photoelectron Spectroscopy as an effective tool for improving biomolecule conjugation [J].
Rella, Simona ;
Mazzotta, Elisabetta ;
Caroli, Antonio ;
De Luca, Maria ;
Bucci, Cecilia ;
Malitesta, Cosimino .
APPLIED SURFACE SCIENCE, 2018, 447 :31-39
[45]   X-Ray photoelectron spectroscopy characterization of reactively sputtered Ti-B-N thin films [J].
Lu, YH ;
Zhou, ZF ;
Sit, P ;
Shen, YG ;
Li, KY ;
Chen, H .
SURFACE & COATINGS TECHNOLOGY, 2004, 187 (01) :98-105
[46]   The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy [J].
Haasch, Richard T. ;
Patscheider, Jorg ;
Hellgren, Niklas ;
Petrov, Ivan ;
Greene, J. E. .
SURFACE SCIENCE SPECTRA, 2012, 19 (01) :92-97
[47]   Interface analysis of HfO2 films on (100)Si using x-ray photoelectron spectroscopy [J].
Sokolov, A. A. ;
Filatova, E. O. ;
Afanas'ev, V. V. ;
Taracheva, E. Yu ;
Brzhezinskaya, M. M. ;
Ovchinnikov, A. A. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (03)
[48]   Charge Transfer Across Oxide Interfaces Probed by in Situ X-ray Photoelectron and Absorption Spectroscopy Techniques [J].
Lenser, Christian ;
Lu, Qiyang ;
Crumlin, Ethan ;
Bluhm, Hendrik ;
Yildiz, Bilge .
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (09) :4841-4848
[49]   X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering [J].
Jacobsohn, LG ;
Schulze, RK ;
da Costa, MEHM ;
Nastasi, M .
SURFACE SCIENCE, 2004, 572 (2-3) :418-424
[50]   STRUCTURAL INVESTIGATION OF SBGESE GLASSES BY HIGH RESOLUTION X-RAY PHOTOELECTRON SPECTROSCOPY [J].
Sati, D. C. ;
Purohit, L. P. ;
Mehra, R. M. ;
Kovalski, A. ;
Golovchak, R. ;
Jain, H. .
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) :302-307