In situ investigation of M/CuO interface (M is Ti, V, Cr or Mn) by X-ray photoelectron spectroscopy

The technique of X-ray photoelectron spectroscopy has been used to investigate the chemical reactivity at the metal/CuO interfaces. Thin films of the metallic overlayer (0.5 nm, 1.0 nm and 2.0 nm thickness) were deposited on copper oxide substrates at room temperature. In situ characterization of the interfaces has been performed. The 2p core level regions of the metals have been investigated. The spectral features show considerable reactivity at the interfaces. The core level peaks of the metal are observed to be shifted to the high BE energy side with the appearance of satellites. The spectral data confirm the formation of the metallic oxide at the interface. The satellite structure in the copper region is observed to disappear and the spectral features are found to approach those of elemental copper. The room temperature deposition of the metal on copper oxide therefore results in the reduction of copper oxide to elemental copper followed by the oxidation of the metal. The interface is found to consist of a mixture of metal oxide and elemental copper. The 2.0 nm samples were annealed. These samples show the diffusion of copper oxide through the overlayer. The metal reacts with this diffusing oxide to form metallic oxide. The interface is found to consist of a mixture of unreacted metal, the metal oxide, and elemental copper. The amount of the unreacted metal varied between 0% and 40% and can be controlled by the processing conditions. The investigation shows room temperature chemical reactivity at the metal/CuO interface and provides a new method of preparing sub-nano-oxide films.