Vertical structure p-type permeable metal-base organic transistors based on N,N′-diphentyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine

被引：22

作者：

Huang, Jinying ^{[1
]}

Yi, Mingdong ^{[1
]}

Ma, Dongge ^{[1
]}

Hummelgen, Ivo A. ^{[2
]}

机构：

[1] Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

[2] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2944880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270. (C) 2008 American Institute of Physics.

引用

页数：3

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