Charge Photogeneration in Few-Layer MoS2

被引：86

作者：

Borzda, Tetiana ^{[1
,2
]}

Gadermaier, Christoph ^{[1
,2
]}

Vujicic, Natasa ^{[1
,3
]}

Topolovsek, Peter ^{[1
,2
]}

Borovsak, Milos ^{[1
,4
]}

Mertelj, Tomaz ^{[1
]}

Viola, Daniele ^{[5
]}

Manzoni, Cristian ^{[5
]}

Pogna, Eva A. A. ^{[5
]}

Brida, Daniele ^{[6
,7
]}

Antognazza, Maria Rosa ^{[8
]}

Scotognella, Francesco ^{[5
,8
]}

Lanzani, Guglielmo ^{[5
,8
]}

Cerullo, Giulio ^{[5
]}

Mihailovic, Dragan ^{[1
,2
,9
]}

机构：

[1] Jozef Stefan Inst, Dept Complex Matter, Ljubljana 1000, Slovenia

[2] Jozef Stefan Int Postgrad Sch, Ljubljana 1000, Slovenia

[3] Inst Phys, Zagreb 10000, Croatia

[4] Univ Ljubljana, Fac Math & Phys, Ljubljana 1000, Slovenia

[5] Politecn Milan, Dept Phys, IFN CNR, I-20133 Milan, Italy

[6] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[7] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany

[8] Italian Inst Technol, Ctr Nano Sci & Technol, I-20133 Milan, Italy

[9] Ctr Excellence Nanosci & Nanotechnol, Ljubljana 1000, Slovenia

来源：

ADVANCED FUNCTIONAL MATERIALS | 2015年 / 25卷 / 22期

关键词：

charge generation; excitons; femtosecond spectroscopy; MoS2; transition metal dichalcogenides; CARRIER DYNAMICS; MONOLAYER MOS2; MONO LAYER; PHOTOLUMINESCENCE; RENORMALIZATION; EXCITATIONS; DENSITY; STATES; FILMS;

D O I：

10.1002/adfm.201500709

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The 2D semiconductor MoS2 in its mono- and few-layer form is expected to have a significant exciton binding energy of several 100 meV, suggesting excitons as the primary photoexcited species. Nevertheless, even single layers show a strong photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating efficient charge carrier photogeneration. Here, modulation spectroscopy in the sub-ps and ms time scales is used to study the photoexcitation dynamics in few-layer MoS2. The results suggest that the primary photoexcitations are excitons that efficiently dissociate into charges with a characteristic time of 700 fs. Based on these findings, simple suggestions for the design of efficient MoS2 photovoltaic and photodetector devices are made.

引用

页码：3351 / 3358

页数：8

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