Impact of BEOL Film Deposition on Poly-Si 3D NAND Device Characteristics

被引：0
作者：
Zhao, Yue-Xin [1 ,2 ,3 ]
Liu, Jun [3 ]
Hu, Xiao-Long [3 ]
Li, Yuan [3 ]
Hua, Zi-Qun [3 ]
Jin, Lei [1 ,2 ,3 ]
Huo, Zong-Liang [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Yangtze Memory Technol Co Ltd, Wuhan 430205, Hubei, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
基金：
中国国家自然科学基金;
关键词：
BEOL; film stack; 3D NAND; poly-Si; grain boundary traps; hydrogen passivation; HYDROGEN PASSIVATION; MOISTURE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the impact of back-end-of-line (BEOL) passivation film deposition on poly-Si 3D NAND device characteristics is investigated. Different interlayer film stacks in BEOL process are found to have significant influence on poly-Si grain boundary traps (GBT) passivation and cell device characteristics. It is considered that BEOL film stacks can influence poly-Si GBT density during subsequent hydrogen passivation process. By optimization of BEOL film stacks, device characteristics are significantly improved.
引用
收藏
页码：1228 / 1230
页数：3
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