Structure determination of the indium-induced Ge(103)-(1 X 1) reconstruction by surface X-ray diffraction

被引：4

作者：

Bunk, O

Falkenberg, G

Zeysing, JH

Lottermoser, L

Johnson, RL

Nielsen, M

Berg-Rasmussen, F

Feidenhans'l, R

机构：

[1] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[2] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

surface structure; facets; high index; indium; germanium; surface X-ray diffraction;

D O I：

10.1016/S0169-4332(98)00719-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A detailed structural model of the indium-induced Ge(103)-(1 X 1) surface reconstruction has been established by analyzing an extensive set of X-ray data recorded with synchrotron radiation. Our results show that models with one indium and one germanium adatom per unit cell are incompatible with the data. A model with two indium adatoms per unit cell saturates all the dangling bonds on the Ge(103) surface, preserves the symmetry and is compatible with all of the experimental results. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：88 / 93

页数：6

共 14 条

[1] Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface X-ray diffraction and scanning tunneling microscopy [J].