Conductance quantization in an array of ballistic constrictions

被引：0

作者：

de Haan, S ^{[1
]}

Lorke, A ^{[1
]}

Kotthaus, JP ^{[1
]}

Wegscheider, W ^{[1
]}

Bichler, M ^{[1
]}

机构：

[1] LMU Munchen, Sekt Phys, D-80539 Munich, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the transport properties of a two-dimensional array of ballistic constrictions and found that the conductivity as a function of gate voltage increases in approximately equally spaced steps. Surprisingly, the height of the observed steps is not an integer multiple of 2e(2)/h, but roughly one third of this fundamental unit. Numerical simulations strongly suggest that this increase in resistance is due to coupling between parallel channels in our superlattice.

引用

页码：755 / 756

页数：2

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