Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design

被引：77

作者：

Kim, H. S. ^{[1
]}

Plis, E. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Bishop, G. D. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Dawson, L. R. ^{[1
]}

Krishna, S. ^{[1
]}

Bundas, J. ^{[2
]}

Cook, R. ^{[2
]}

Burrows, D. ^{[2
]}

Dennis, R. ^{[2
]}

Patnaude, K. ^{[2
]}

Reisinger, A. ^{[2
]}

Sundaram, M. ^{[2
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

[2] QmagiQ LLC, Nashua, NH USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2920764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A midwave infrared camera (lambda(c)=4.2 mu m) with a 320 x 256 focal plane array (FPA) based on type-II InAs/GaSb strain layer superlattice (SLs) has been demonstrated. The detectors consist of an nBn heterostructure, wherein the SL absorber and contact layers are separated by a Al0.2Ga0.8Sb barrier layer, which is designed to have a minimum valence band offset. Unlike a PN junction, the size of the device is not defined by a mesa etch but confined by the lateral diffusion length of minority carriers. At 77 K, the FPA demonstrates a temporal noise equivalent temperature difference (NETD) of 23.8 mK (T-int=16.3 ms and V-b=0.7 V) with a peak quantum efficiency and detectivity at 3.8 mu m equal to 52% and 6.7 x 10(11) Jones, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

共 12 条

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