Dislocation and microindentation analysis of vapour grown Bi2Te3-xSex whiskers

被引:9
作者
Kunjomana, A. G. [1 ]
Chandrasekharan, K. A. [1 ]
机构
[1] Christ Coll Autonomous, PG Dept Phys, Bangalore 560029, Karnataka, India
关键词
bismuth telluride; physical vapour deposition (PVD); whiskers; dislocation loops; stacking faults; microhardness; annealing; quenching;
D O I
10.1002/crat.200711084
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The structural defects and microhardness of Bi2Te3-xSex whiskers (x = 0, 0.2 and 0.4 at % Se) grown by physical vapour deposition (PVD) method have been investigated. Concentric pairs of dislocation loops were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by chemical etching technique. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the prism faces of Bi2Te3-xSex whiskers. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:594 / 598
页数:5
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