Impurity impact ionization avalanche in p-type diamond

被引：13

作者：

Mortet, V. ^{[1
,2
,3
]}

Soltani, A. ^{[4
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France

[3] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium

[4] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 20期

关键词：

ELECTRICAL-CONDUCTION; BREAKDOWN;

D O I：

10.1063/1.3662403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662403]

引用

页数：3

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