Polarization doping of graphene on silicon carbide

被引：82

作者：

Mammadov, Samir ^{[1
]}

Ristein, Juergen ^{[2
]}

Koch, Roland J. ^{[1
]}

Ostler, Markus ^{[1
]}

Raidel, Christian ^{[1
]}

Wanke, Martina ^{[1
]}

Vasiliauskas, Remigijus ^{[3
]}

Yakimova, Rositza ^{[3
]}

Seyller, Thomas ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Laserphys, D-91058 Erlangen, Germany

[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

2D MATERIALS | 2014年 / 1卷 / 03期

关键词：

graphene; silicon carbide; polytype; doping; XPS; ARPES; EPITAXIAL-GRAPHENE; ELECTRONIC-STRUCTURE; PASSIVATION; TRANSISTORS; SURFACES;

D O I：

10.1088/2053-1583/1/3/035003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by (i) the spontaneous polarization of the substrate, and (ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC (Ristein et al 2012 Phys. Rev. Lett. 108 246104).

引用

页数：10

共 40 条

[21] ABINITIO STUDY OF THE SPONTANEOUS POLARIZATION OF PYROELECTRIC BEO [J].

POSTERNAK, M ;

BALDERESCHI, A ;

CATELLANI, A ;

RESTA, R .

PHYSICAL REVIEW LETTERS, 1990, 64 (15) :1777-1780

[22] ELECTRONIC-CHARGE DISPLACEMENT AROUND A STACKING BOUNDARY IN SIC POLYTYPES [J].

QTEISH, A ;

HEINE, V ;

NEEDS, RJ .

PHYSICAL REVIEW B, 1992, 45 (12) :6376-6382

[23] SPONTANEOUS POLARIZATION FROM 1ST-PRINCIPLES - PYROELECTRIC BEO [J].

RESTA, R ;

POSTERNAK, M ;

BALDERESCHI, A ;

CATELLANI, A .

FERROELECTRICS, 1990, 111 :15-17

[24] Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation [J].

Riedl, C. ;

Coletti, C. ;

Iwasaki, T. ;

Zakharov, A. A. ;

Starke, U. .

PHYSICAL REVIEW LETTERS, 2009, 103 (24)

[25] Hydrogen Intercalation below Epitaxial Graphene on SiC(0001) [J].

Riedl, Christian ;

Coletti, Camilla ;

Iwasaki, Takayuki ;

Starke, Ulrich .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :623-628

[26] Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide [J].

Ristein, J. ;

Mammadov, S. ;

Seyller, Th .

PHYSICAL REVIEW LETTERS, 2012, 108 (24)

[27] Passivation of hexagonal SiC surfaces by hydrogen termination [J].

Seyller, T .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (17) :S1755-S1782

[28] Electronic structure of graphite/6H-SiC interfaces [J].

Seyller, Th. ;

Emtsev, K. V. ;

Speck, F. ;

Gao, K. -Y. ;

Ley, L. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :701-+

[29] Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination [J].

Sieber, N ;

Mantel, BF ;

Seyller, T ;

Ristein, J ;

Ley, L ;

Heller, T ;

Batchelor, DR ;

Schmeisser, D .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1216-1218

[30] A comparative DFT study of electronic properties of 2H-, 4H-and 6H-SiC(0001) and SiC(000(1)over-bar) clean surfaces: significance of the surface Stark effect [J].

Soltys, Jakub ;

Piechota, Jacek ;

Lopuszynski, Michal ;

Krukowski, Stanislaw .

NEW JOURNAL OF PHYSICS, 2010, 12

← 1 2 3 4 →