Polarization doping of graphene on silicon carbide

被引：82

作者：

Mammadov, Samir ^{[1
]}

Ristein, Juergen ^{[2
]}

Koch, Roland J. ^{[1
]}

Ostler, Markus ^{[1
]}

Raidel, Christian ^{[1
]}

Wanke, Martina ^{[1
]}

Vasiliauskas, Remigijus ^{[3
]}

Yakimova, Rositza ^{[3
]}

Seyller, Thomas ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Laserphys, D-91058 Erlangen, Germany

[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

2D MATERIALS | 2014年 / 1卷 / 03期

关键词：

graphene; silicon carbide; polytype; doping; XPS; ARPES; EPITAXIAL-GRAPHENE; ELECTRONIC-STRUCTURE; PASSIVATION; TRANSISTORS; SURFACES;

D O I：

10.1088/2053-1583/1/3/035003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by (i) the spontaneous polarization of the substrate, and (ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC (Ristein et al 2012 Phys. Rev. Lett. 108 246104).

引用

页数：10

共 40 条

[1] POLAR PROPERTIES OF BEO SINGLE CRYSTALS [J].

AUSTERMAN, SB ;

BERLINCOURT, D ;

KRUEGER, HHA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :339-&

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Large area quasi-free standing monolayer graphene on 3C-SiC(111) [J].

Coletti, C. ;

Emtsev, K. V. ;

Zakharov, A. A. ;

Ouisse, T. ;

Chaussende, D. ;

Starke, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (08)

[4] Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study [J].

Emtsev, K. V. ;

Speck, F. ;

Seyller, Th. ;

Ley, L. ;

Riley, J. D. .

PHYSICAL REVIEW B, 2008, 77 (15)

[5]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[6] Epitaxial Graphenes on Silicon Carbide [J].

First, Phillip N. ;

de Heer, Walt A. ;

Seyller, Thomas ;

Berger, Claire ;

Stroscio, Joseph A. ;

Moon, Jeong-Sun .

MRS BULLETIN, 2010, 35 (04) :296-305

[7] Illuminating the dark corridor in graphene: Polarization dependence of angle-resolved photoemission spectroscopy on graphene [J].

Gierz, Isabella ;

Henk, Juergen ;

Hoechst, Hartmut ;

Ast, Christian R. ;

Kern, Klaus .

PHYSICAL REVIEW B, 2011, 83 (12)

[8] Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene [J].

Goler, Sarah ;

Coletti, Camilla ;

Piazza, Vincenzo ;

Pingue, Pasqualantonio ;

Colangelo, Francesco ;

Pellegrini, Vittorio ;

Emtsev, Konstantin V. ;

Forti, Stiven ;

Starke, Ulrich ;

Beltram, Fabio ;

Heun, Stefan .

CARBON, 2013, 51 :249-254

[9] Charge transfer between epitaxial graphene and silicon carbide [J].

Kopylov, Sergey ;

Tzalenchuk, Alexander ;

Kubatkin, Sergey ;

Fal'ko, Vladimir I. .

APPLIED PHYSICS LETTERS, 2010, 97 (11)

[10] 100-GHz Transistors from Wafer-Scale Epitaxial Graphene [J].

Lin, Y. -M. ;

Dimitrakopoulos, C. ;

Jenkins, K. A. ;

Farmer, D. B. ;

Chiu, H. -Y. ;

Grill, A. ;

Avouris, Ph. .

SCIENCE, 2010, 327 (5966) :662-662

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