Failure Mode for p-GaN gates under forward gate stress with varying Mg concentration

被引：0

作者：

Stoffels, S. ^{[1
]}

Bakeroot, B. ^{[2
,3
]}

Wu, T. L. ^{[1
]}

Marcon, D. ^{[1
]}

Posthuma, N. E. ^{[1
]}

Decoutere, S. ^{[1
]}

Tallarico, A. N. ^{[4
]}

Fiegna, C. ^{[4
]}

机构：

[1] IMEC, STS, PMST, B-3001 Leuven, Belgium

[2] IMEC, CMST, B-9052 Ghent, Belgium

[3] Univ Ghent, B-9052 Ghent, Belgium

[4] Univ Bologna, DEI, I-47521 Cesena, FC, Italy

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

Gallium nitride; Gate leakage; Semiconductor device reliability; CONDUCTIVITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we investigate the failure modes of GaN based e-mode transistors with a p-GaN gate, for which the top contact towards the p-GaN is realized with a Schottky metal. First the general performance and stability of the platform will be demonstrated, together with the time dependent dielectric breakdown (TDDB) behavior of the gate. The failure mechanism of the gate has been studied by performing constant voltage stress (CVS) measurements. This has been performed for two different process conditions with varying active Mg concentration. Main results in this paper demonstrate i. Reliable device operation for p-GaN gates with Schottky metal contacts ii. TDDB degradation of the gate driven by a percolation path iii. The type of percolation path is dependent on the gate processing. Results indicate the formation of a percolation path in the AlGaN barrier, which is demonstrated by experiments and further verified by modelling.

引用

页数：9

共 14 条

[1] A COMPARISON OF ONE, 2, AND 3 BAND CALCULATIONS OF CONTACT RESISTANCE FOR A GAAS OHMIC CONTACT USING THE WENTZEL-KRAMERS-BRILLOUIN APPROXIMATION AND A NUMERICAL-SOLUTION TO THE SCHRODINGER-EQUATION [J].