The role of dislocations as nonradiative recombination centers in InGaN quantum wells

被引：65

作者：

Abell, Josh ^{[1
]}

Moustakas, T. D. ^{[1
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Ctr Photon Res, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2889444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multiple quantum wells (MQWs) were grown on atomically smooth c-GaN templates and identical c-GaN templates etched to reveal hexagonal pits associated with screw dislocations. We found that the room temperature internal quantum efficiency of the MQWs grown on the etched c-GaN templates is a factor of 2 higher than that of the smooth QWs. This finding is accounted for by the fact that the QWs on the nonplanar surfaces are thinner than the c-plane QWs, and thus the carriers are prevented from reaching the dislocations due to the energy barrier around each defect.

引用

页数：3

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