A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors

被引：40
作者：
Esseni, David [1 ]
Driussi, Francesco [1 ]
机构：
[1] Univ Udine, Dipartimento Ingn Elettr Gestionale & Meccan, I-33100 Udine, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 08期
关键词：
Coulomb-limited mobility; Matthiessen's rule; mobility characterization; mobility simulation; strain; COULOMB SCATTERING MOBILITY; ELECTRON-MOBILITY; TEMPERATURE-DEPENDENCE; CARRIER MOBILITY; MOSFETS; DEVICES; STRAIN; GATE;
D O I：
10.1109/TED.2011.2151863
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a quantitative analysis of the errors produced by the Matthiessen rule in the extraction of the inversion-layer mobility in metal-oxide-semiconductor transistors. We show that the Matthiessen rule results in large inaccuracies in the mobility extraction, and most of all, it can lead to wrong trends, namely, to an incorrect dependence of the mobility on the temperature or the strain level. Consequently, when the Matthiessen rule is used to infer a given mobility component from the experiments, the inaccuracy of the extraction procedure can yield apparent discrepancies between experiments and simulations. Our results demonstrate that the mobility components extracted from the measurements by using the Matthiessen rule should not be regarded as experimental data because the extraction procedure relies on assumptions that are not fulfilled in most practical cases.
引用
收藏
页码：2415 / 2422
页数：8
相关论文
共 34 条
[11]   On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field [J].
Esseni, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) :394-401
[12]   Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs [J].
Esseni, D ;
Abramo, A ;
Selmi, L ;
Sangiorgi, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2445-2455
[13]   Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs [J].
Esseni, D ;
Abramo, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1665-1674
[14]  
Esseni D., 2011, Nanoscale MOS Transistors
[15]   On the enhanced electron mobility in strained-silicon inversion layers [J].
Fischetti, MV ;
Gámiz, F ;
Hänsch, W .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7320-7324
[16]  
Gamiz F, 1996, APPL PHYS LETT, V69, P797, DOI 10.1063/1.117895
[17]  
Ghani T, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P978
[18]   CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J].
HOFSTEIN, SR ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :129-+
[19]   High-Mobility TaN/Al2O3/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer [J].
Jamil, M. ;
Oh, J. ;
Ramon, M. ;
Kaur, S. ;
Majhi, P. ;
Tutuc, E. ;
Banerjee, S. K. .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1208-1210
[20]   Investigation of strained Si/SiGe devices by MC simulation [J].
Jungemann, C ;
Subba, N ;
Goo, JS ;
Riecobene, C ;
Xiang, Q ;
Meinerzhagen, B .
SOLID-STATE ELECTRONICS, 2004, 48 (08) :1417-1422
1234