A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors

被引：40

作者：

Esseni, David ^{[1
]}

Driussi, Francesco ^{[1
]}

机构：

[1] Univ Udine, Dipartimento Ingn Elettr Gestionale & Meccan, I-33100 Udine, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 08期

关键词：

Coulomb-limited mobility; Matthiessen's rule; mobility characterization; mobility simulation; strain; COULOMB SCATTERING MOBILITY; ELECTRON-MOBILITY; TEMPERATURE-DEPENDENCE; CARRIER MOBILITY; MOSFETS; DEVICES; STRAIN; GATE;

D O I：

10.1109/TED.2011.2151863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a quantitative analysis of the errors produced by the Matthiessen rule in the extraction of the inversion-layer mobility in metal-oxide-semiconductor transistors. We show that the Matthiessen rule results in large inaccuracies in the mobility extraction, and most of all, it can lead to wrong trends, namely, to an incorrect dependence of the mobility on the temperature or the strain level. Consequently, when the Matthiessen rule is used to infer a given mobility component from the experiments, the inaccuracy of the extraction procedure can yield apparent discrepancies between experiments and simulations. Our results demonstrate that the mobility components extracted from the measurements by using the Matthiessen rule should not be regarded as experimental data because the extraction procedure relies on assumptions that are not fulfilled in most practical cases.

引用

页码：2415 / 2422

页数：8

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