Evidence of reduced self-heating in strained Si MOSFETs

被引：12

作者：

Nicholas, G ^{[1
]}

Grasby, TJ

Parker, EHC

Whall, TE

Skotnicki, T

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] STMicroelect, F-38926 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 09期

关键词：

MOSFET; self-heating; SiGe; strained silicon;

D O I：

10.1109/LED.2005.854385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of the data at elevated temperatures, -the thermal resistances of the devices are extracted. These are found to be considerably lower than that obtained with a widely used theory. Thermal device simulations demonstrate that the discrepancy is due to an additional conduction path through the field oxide to overlapping aluminum contacts.

引用

页码：684 / 686

页数：3

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