Spin-Valley Locking Effect in Defect States of Monolayer MoS2

被引：83

作者：

Wang, Yaqian ^{[4
,5
]}

Deng, Longjiang ^{[4
,5
]}

Wei, Qilin ^{[1
,2
]}

Wan, Yi ^{[6
]}

Liu, Zhen ^{[4
,5
]}

Lu, Xiao ^{[4
,5
]}

Li, Yue ^{[4
,5
]}

Bi, Lei ^{[4
,5
]}

Zhang, Li ^{[4
,5
]}

Lu, Haipeng ^{[4
,5
]}

Chen, Haiyan ^{[4
,5
]}

Zhou, Peiheng ^{[4
,5
]}

Zhang, Linbo ^{[4
,5
]}

Cheng, Yingchun ^{[1
,2
]}

Zhao, Xiaoxu ^{[3
]}

Ye, Yu ^{[6
]}

Huang, Wei ^{[1
,2
]}

Pennycook, Stephen John ^{[3
]}

Loh, Kian Ping ^{[7
,8
,9
]}

Peng, Bo ^{[4
,5
]}

机构：

[1] Nanjing Tech Univ, Key Lab Flexible Elect, Nanjing 211816, Peoples R China

[2] Nanjing Tech Univ, Inst Adv Mat, Nanjing 211816, Peoples R China

[3] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

[4] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Natl Engn Res Ctr Electromagnet Radiat Control Ma, Chengdu 611731, Peoples R China

[5] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China

[6] Peking Univ, Frontiers Ctr Nanooptoelect, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[7] Natl Univ Singapore, Dept Chem, Singapore 117549, Singapore

[8] Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117549, Singapore

[9] Natl Univ Singapore, Graphene Res Ctr, Singapore 117549, Singapore

来源：

NANO LETTERS | 2020年 / 20卷 / 03期

基金：

中国国家自然科学基金;

关键词：

valleytronic; spintronic; spin manipulation; defect engineering; defect exciton; MOLYBDENUM-DISULFIDE; PHOTOLUMINESCENCE; POLARIZATION; TEMPERATURE; EMISSION; EMITTERS; TRIONS; GAP; WS2;

D O I：

10.1021/acs.nanolett.0c00138

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

引用

页码：2129 / 2136

页数：8

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