Controllable phase transitions between multiple charge density waves in monolayer 1T-VSe2 via charge doping

被引：8

作者：

Wang, Zishen ^{[1
,2
]}

Zhou, Jun ^{[3
]}

Loh, Kian Ping ^{[2
,4
]}

Feng, Yuan Ping ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore

[3] ASTAR, Inst Mat Res & Engn, Singapore 138634, Singapore

[4] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 16期

关键词：

DYNAMICS;

D O I：

10.1063/5.0068241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional materials are known to possess emergent properties that are not found in their bulk counterparts. Recent experiments have shown a 7 x 3 charge density wave (CDW) in monolayer 1 T-VSe2, in contrast to the 4 x 4 x 3 phase in bulk. Here, via first-principles calculations, we show that multiple CDW phases compete in monolayer VSe2, the ground state of which can be tuned by charge doping. With doping, the 7 x 3 CDW of the pristine VSe2 transfers to a 4 x 4 or 3 x 3 phase, at critical doping concentrations of around 0.2 electrons per formula unit and 0.2 holes per formula unit, respectively. These transitions are further understood by analyzing the role of Fermi surface nesting and momentum-dependent electron-phonon coupling in monolayer 1T-VSe2. These results make VSe2 an appealing material for electronic devices based on controllable CDW phase transitions.

引用

页数：7

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