Influence of the electric field on the current instability in the hopping conductivity region

被引：0

作者：

Aladashvili, D. I. ^{[1
]}

Adamia, Z. A. ^{[1
]}

Adamia, A. Z. ^{[1
]}

机构：

[1] Tbilisi State Univ, GE-0128 Tbilisi, Georgia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 3 | 2008年 / 5卷 / 03期

关键词：

D O I：

10.1002/pssc.200777551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the shape of current oscillations observed in the hopping conductivity region in a weakly compensated p-Si on the supply voltage applied to the sample is established. With increasing bias voltage the current pulse shape to form a hopping domain changes significantly. The change in the shape is ascribed to voltage redistribution in corresponding regions in the bulk of the crystal. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：782 / 784

页数：3

共 9 条

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