Analysis of thermodynamic properties and phase equilibria in the Si-P system

被引:5
作者
Arutyunyan, N. A. [1 ]
Zaitsev, A. I. [2 ]
Shaposhnikov, N. G. [2 ]
机构
[1] Moscow MV Lomonosov State Univ, Fac Chem, Moscow 119991, Russia
[2] Bardin Cent Res Inst Iron & Steel Ind, Moscow 105005, Russia
基金
俄罗斯基础研究基金会;
关键词
phase equilibria; liquid and solid solutions of phosphorus; thermodynamic properties; silicon; SILICON; PHOSPHORUS; SOLUBILITY; DIFFUSION; DIAGRAMS; ELEMENTS; DOPANT; LAYERS;
D O I
10.1134/S0036024411060057
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A self-consistent analysis of the available data on thermodynamic properties and phase equilibria in the Si-P system is performed. Thermodynamic properties of solid and liquid solutions of phosphorus in silicon are approximated on the basis of the concepts of dilute and ideal associated solutions. The thermodynamic properties and phase boundaries in the range of compositions 0 a parts per thousand currency sign x(P) a parts per thousand currency sign 0.5 are adequately described.
引用
收藏
页码:911 / 915
页数:5
相关论文
共 23 条
[1]  
ABRIKOSOV NK, 1962, ZH NEORG KHIM+, V7, P831
[2]  
[Anonymous], LANDOLTBORNSTEIN DAT
[3]  
Bentzen A., 2006, 21 EUROPEAN PHOTOVOL, P1388
[4]  
BORISENKO VE, 1987, PHYS STATUS SOLIDI A, V101, P123, DOI 10.1002/pssa.2211010113
[5]   GRAIN-BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC [J].
CARABELAS, A ;
NOBILI, D ;
SOLMI, S .
JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :187-192
[6]   SGTE DATA FOR PURE ELEMENTS [J].
DINSDALE, AT .
CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1991, 15 (04) :317-425
[7]   POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].
FAHEY, PM ;
GRIFFIN, PB ;
PLUMMER, JD .
REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384
[8]   UBER EIN SILICIUMPHOSPHID SI2P [J].
FRITZ, G ;
BERKENHOFF, HO .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 300 (3-4) :205-209
[9]  
GIESSEN B, 1959, Z METALLKD, V50, P274
[10]  
KARAKAYA I, 1988, B ALLOY PHASE DIAGRA, V9, P322