Study and Analysis of Noise in CMOS Circuit Design using C5 model process technology

被引：0

作者：

Johari, Ayoush ^{[1
]}

Changlani, Soni ^{[1
]}

机构：

[1] LNCT, Dept Elect & Commun Engn, Bhopal, Madhya Pradesh, India

来源：

2018 INTERNATIONAL CONFERENCE ON ADVANCED COMPUTATION AND TELECOMMUNICATION (ICACAT) | 2018年

关键词：

Thermal noise; Flicker noise; CMOS; Spectral analyzer; PSD; Noise modeling; FLICKER NOISE; ANALOG; TRANSISTORS; FETS;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Noise behavior in microelectronic devices is mainly contributed by shot noise, thermal noise and flicker noises, avalanche noise and burst noises etc. Other factors that constitute to noise are various generation and recombination procedures, power lines and scaling technology associated in CMOS designs. Thermal noise or noise due to thermal agitations with flicker noise are the primary noise sources in scalable MOSFET circuit designs however there are many more sources of noise. This paper analyzes how input referred noise sources are summed up to a CMOS design model to calculate output noise. The noise temperature and its impact on performance of a CMOS design will also be in consideration along with characterization of input and output noises.

引用

页数：4

共 30 条

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