n-type conductivity in oxygen ion implanted nanocrystalline diamond films

被引：0

作者：

Hu, X. J. ^{[1
]}

Liu, H. J. ^{[1
]}

Pan, J. P. ^{[1
]}

Lu, L. P. ^{[1
]}

机构：

[1] Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou, Zhejiang, Peoples R China

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

ULTRANANOCRYSTALLINE DIAMOND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanocrystalline diamond films were implanted by oxygen ion and annealed under different temperatures. The results show that the oxygen ion implanted nanocrystalline diamond films exhibit n-type conductivity when the annealing temperature is above 800 degrees C. The annealing stimulates the electrical activation of oxygen ion implanted diamond grains and grain boundaries. The origin of n-type conductivity and related mechanisms are discussed.

引用

页码：620 / 621

页数：2

共 6 条

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