Direct measurement of electron drift parameters using depth sensing single carrier CdZnTe detectors

被引：4

作者：

He, Z ^{[1
]}

Knoll, GF ^{[1
]}

Wehe, DK ^{[1
]}

Du, YF ^{[1
]}

机构：

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-89

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes some novel techniques developed for directly measuring the electron mobility mu(e) and mean free drift time tau(e) in wide band gap semiconductors. These methods are based on a newly-developed digital data analysis system, in conjunction with single carrier charge sensing and depth sensing techniques. Compared with conventional methods, the new techniques are easier to implement, do not involve curve fitting, allow the use of high energy gamma-rays and are not sensitive to variations in pulse rise time.

引用

页码：89 / 94

页数：6