Charge collection microscopy of in-situ switchable PRAM line cells in a scanning electron microscope: Technique development and unique observations

被引:3
作者
Oosthoek, J. L. M. [1 ,2 ]
Schuitema, R. W. [1 ,2 ]
ten Brink, G. H. [1 ,2 ]
Gravesteijn, D. J. [3 ]
Kooi, B. J. [1 ,2 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[2] Univ Groningen, Mat Innovat Inst M2i, NL-9747 AG Groningen, Netherlands
[3] NXP Semicond, B-3001 Leuven, Belgium
关键词
PHASE-CHANGE NANOWIRES; MEMORY TECHNOLOGY; MODE;
D O I
10.1063/1.4914104
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An imaging method has been developed based on charge collection in a scanning electron microscope (SEM) that allows discrimination between the amorphous and crystalline states of Phase-change Random Access Memory (PRAM) line cells. During imaging, the cells are electrically connected and can be switched between the states and the resistance can be measured. This allows for electrical characterization of the line cells in-situ in the SEM. Details on sample and measurement system requirements are provided which turned out to be crucial for the successful development of this method. Results show that the amorphous or crystalline state of the line cells can be readily discerned, but the spatial resolution is relatively poor. Nevertheless, it is still possible to estimate the length of the amorphous mark, and also for the first time, we could directly observe the shift of the amorphous mark from one side of the line cell to the other side when the polarity of the applied (50 ns) RESET pulse was reversed. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:9
相关论文
共 21 条
[11]   In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory [J].
Meister, Stefan ;
Kim, SangBum ;
Cha, Judy J. ;
Wong, H-S Philip ;
Cui, Yi .
ACS NANO, 2011, 5 (04) :2742-2748
[12]   Void Formation Induced Electrical Switching in Phase-Change Nanowires [J].
Meister, Stefan ;
Schoen, David T. ;
Topinka, Mark A. ;
Minor, Andrew M. ;
Cui, Yi .
NANO LETTERS, 2008, 8 (12) :4562-4567
[13]   Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires [J].
Nam, Sung-Wook ;
Chung, Hee-Suk ;
Lo, Yu Chieh ;
Qi, Liang ;
Li, Ju ;
Lu, Ye ;
Johnson, A. T. Charlie ;
Jung, Yeonwoong ;
Nukala, Pavan ;
Agarwal, Ritesh .
SCIENCE, 2012, 336 (6088) :1561-1566
[14]  
OOSTHOEK J, 2009, P E PCOS S, P140
[15]   Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells [J].
Oosthoek, J. L. M. ;
Voogt, F. C. ;
Attenborough, K. ;
Verheijen, M. A. ;
Hurkx, G. A. M. ;
Gravesteijn, D. J. ;
Kooi, B. J. .
JOURNAL OF APPLIED PHYSICS, 2015, 117 (06)
[16]   The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells [J].
Oosthoek, J. L. M. ;
Krebs, D. ;
Salinga, M. ;
Gravesteijn, D. J. ;
Hurkx, G. A. M. ;
Kooi, B. J. .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
[17]   Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory [J].
Oosthoek, J. L. M. ;
Attenborough, K. ;
Hurkx, G. A. M. ;
Jedema, F. J. ;
Gravesteijn, D. J. ;
Kooi, B. J. .
JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
[18]   Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials [J].
Pirovano, A ;
Lacaita, AL ;
Pellizzer, F ;
Kostylev, SA ;
Benvenuti, A ;
Bez, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (05) :714-719
[19]   Phase Change Materials and Their Application to Nonvolatile Memories [J].
Raoux, Simone ;
Welnic, Wojciech ;
Ielmini, Daniele .
CHEMICAL REVIEWS, 2010, 110 (01) :240-267
[20]   PROBLEMS ASSOCIATED WITH IMAGING RESISTIVE BARRIERS IN BATIO3 PTC CERAMICS USING THE SEM CONDUCTIVE MODE [J].
RUSSELL, JD ;
LEACH, C .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1995, 15 (07) :617-622