High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

被引：1

作者：

Furumiya, M ^{[1
]}

Ohkubo, H ^{[1
]}

Muramatsu, Y ^{[1
]}

Kurosawa, S ^{[1
]}

Nakashiba, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-photosensitivity and no-cross-talk pixel technology has been developed for an embedded active-pixel CMOS image sensor using a 0.35-mum CMOS logic process. To increase photosensitivity, we developed a deep low-concentration p-well (deep p-well) photodiode. To suppress pixel cross-talk caused by obliquely incident light, a double-metal photoshield was used. The cross-talk caused by electron diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-inch 330k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nn incident light was obtained.

引用

页码：701 / 704

页数：4

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