Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

被引：42

作者：

Du, H. W. ^{[1
]}

Yang, J. ^{[1
]}

Li, Y. H. ^{[1
]}

Xu, F. ^{[1
]}

Xu, J. ^{[2
]}

Ma, Z. Q. ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shanghai 200444, Peoples R China

[2] Shanghai Univ, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 09期

基金：

中国国家自然科学基金;

关键词：

CARRIER TRANSPORT; EFFICIENCY; JUNCTION; BARRIER; LAYER;

D O I：

10.1063/1.4914325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V-bi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling. (C) 2015 AIP Publishing LLC.

引用

页数：5

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