Electrical Readout of Carrier Dynamics in Micro-Scale Infrared Materials

被引：0

作者：

Dev, S. ^{[1
]}

Wang, Y. ^{[1
]}

Kim, K. ^{[1
]}

Zamiri, M. ^{[2
]}

Hawkins, S. ^{[3
]}

Shaner, E. ^{[3
]}

Kim, J. ^{[3
]}

Allen, J. ^{[4
]}

Allen, M. ^{[4
]}

Krishna, S. ^{[5
]}

Tutuc, E. ^{[1
]}

Wasserman, D. ^{[1
]}

机构：

[1] Univ Texas Austin, Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Univ Wisconsin, Mat Sci & Engn, Madison, WI 53706 USA

[3] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[4] Air Force Res Lab, Munit Directorate, Eglin, FL 32542 USA

[5] Ohio State Univ, Elect & Comp Engn, Columbus, OH 43210 USA

来源：

2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID) | 2018年

关键词：

RECOMBINATION VELOCITY; LIFETIME; DECAY;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a technique, Micro-Scale Microwave Resonator Time Response (mu-MRTR), capable of measuring photo-excited carrier lifetimes in micro-scale material volumes using a resonant microwave circuit with direct electrical readout. We demonstrate a similar to 10(5) improvement in sensitivity when compared to traditional lifetime measurement techniques.

引用

页码：147 / 150

页数：4