Surface compositional profiles of self-assembled InAs/GaAs quantum rings

被引:0
作者
Magri, Rita [1 ]
Heun, Stefan [2 ]
Biasiol, Giorgio [3 ]
Locatelli, Andrea [4 ]
Mentes, Tevfik O. [4 ]
Sorba, Lucia [2 ,3 ]
机构
[1] S3 INFM CNR, Via Campi 213-A, I-41100 Modena, Italy
[2] Scuola Normale Super Pisa, CNR, NEST INFM, I-56126 Pisa, Italy
[3] CNR, Lab Nazionale TASC INFM, I-34012 Trieste, Italy
[4] Sincrotrone Trieste SCPA, I-34012 Trieste, Italy
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
Nanostructures; Characterization; Atomistic models; Molecular Beam Epitaxy; III-V Semiconductors; DOTS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both experimentally and theoretically. By using X-ray Photoemission Electron Microscopy (XPEEM) we obtain a 2D composition mapping of unburied rings, which can be directly related to the QR topography measured by Atomic Force Microscopy (AFM). Top-surface composition mapping allows us to obtain information on structures which cannot be directly accessed with cross-sectional studies since overgrowing the QRs with a thick GaAs film alters both their morphology and composition. The 2D surface maps reveal a non-uniform distribution across the rings with an In richer InGaAs alloy in the central hole regions. Elastic energy calculations via a Valence Force Field (VFF) approach show that, for a given shape of the rings and a fixed total number of Ga and In atoms, an In enrichment of the alloy in the central hole region, together with art In enrichment of the surface layers, leads to a lowering of the total strain energy.
引用
收藏
页码:3 / +
页数:2
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