Photoconductive gain of SiGe/Si quantum well photodetectors

被引：9

作者：

Liu, F ^{[1
]}

Tong, S ^{[1
]}

Kim, HJ ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

OPTICAL MATERIALS | 2005年 / 27卷 / 05期

关键词：

D O I：

10.1016/j.optmat.2004.08.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A SiGe/Si Multiple Quantum Wells (MQWs) structure is proposed for highly sensitive photodetection. A large photoconductive gain is obtained because of the unique SiGe/Si band structure, i.e., a large band offset in the valence band, but a small band offset in the conduction band. Such a structure allows the trapping of photogenerated holes inside the valance band quantum wells. Alternatively, photogenerated electrons appear in shallow quantum wells and have relatively high mobility. These give rise to a large photoconductive gain. The calculated photoconductive gain for this structure exceeds 2 x 10(7). Experimental results confirmed a high gain of the structure. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：864 / 867

页数：4

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