Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates

被引：14

作者：

Ebil, Ozgenc ^{[1
]}

Aparicio, Roger ^{[2
]}

Birkmire, Robert ^{[3
]}

机构：

[1] EM Photon Inc, Newark, DE 19711 USA

[2] GE Ceram Composite Prod LLC, Newark, DE 19713 USA

[3] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 01期

关键词：

Hot wire chemical vapor deposition; Silicon; Aluminum-induced crystallization; INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; THIN-FILM; POLYCRYSTALLINE SILICON; LAYER EXCHANGE; LOW-TEMPERATURES; SOLAR-CELLS; GROWTH; AL; KINETICS;

D O I：

10.1016/j.tsf.2010.07.097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum-induced crystallization of amorphous silicon films is discussed. Amorphous Si films were deposited by hot wire chemical vapor deposition onto Al coated glass substrates at 430 degrees C. Complete crystallization of a-Si films was achieved during a-Si deposition by controlling Al and Si layer thicknesses. The grain structure of the poly-Si films formed on glass substrate was evaluated by optical and electron microscopy. Continuous poly-Si films were obtained using Al layers with a thickness of 500 nm or less. The average grain size was found to be 10-15 mu m, corresponding to a grain size/thickness ratio greater than 20. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：178 / 183

页数：6

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