Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates

被引：14

作者：

Ebil, Ozgenc ^{[1
]}

Aparicio, Roger ^{[2
]}

Birkmire, Robert ^{[3
]}

机构：

[1] EM Photon Inc, Newark, DE 19711 USA

[2] GE Ceram Composite Prod LLC, Newark, DE 19713 USA

[3] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 01期

关键词：

Hot wire chemical vapor deposition; Silicon; Aluminum-induced crystallization; INDUCED LATERAL CRYSTALLIZATION; METAL-INDUCED CRYSTALLIZATION; THIN-FILM; POLYCRYSTALLINE SILICON; LAYER EXCHANGE; LOW-TEMPERATURES; SOLAR-CELLS; GROWTH; AL; KINETICS;

D O I：

10.1016/j.tsf.2010.07.097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum-induced crystallization of amorphous silicon films is discussed. Amorphous Si films were deposited by hot wire chemical vapor deposition onto Al coated glass substrates at 430 degrees C. Complete crystallization of a-Si films was achieved during a-Si deposition by controlling Al and Si layer thicknesses. The grain structure of the poly-Si films formed on glass substrate was evaluated by optical and electron microscopy. Continuous poly-Si films were obtained using Al layers with a thickness of 500 nm or less. The average grain size was found to be 10-15 mu m, corresponding to a grain size/thickness ratio greater than 20. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：178 / 183

页数：6

共 50 条

[1] Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition
Wu, Bing-Rui
Lo, Shih-Yung
Wuu, Dong-Sing
Ou, Sin-Liang
Mao, Hsin-Yuan
Wang, Jui-Hao
Horng, Ray-Hua
THIN SOLID FILMS, 2012, 520 (18) : 5860 - 5866
[2] The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films
Hwang, Jun-Dar
Luo, Lee-Chi
Brahma, Sanjaya
Lo, Kuang-Yao
THIN SOLID FILMS, 2016, 618 : 50 - 54
[3] Silicon-hydrogen bond effects on aluminum-induced crystallization of hydrogenated amorphous silicon films
Zhai, Xiaoli
Tan, Ruiqin
Wang, Weiyan
Huang, Jinhua
Zhuang, Fuqiang
Dai, Shixun
Song, Weijie
JOURNAL OF CRYSTAL GROWTH, 2014, 402 : 99 - 103
[4] Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias
Zhang, Lei
Shen, Honglie
You, Jiayi
JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (08) : 2464 - 2469
[5] On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si
Pan, Qingtao
Wang, Tao
Yan, Hui
Zhang, Ming
Mai, Yaohua
BRAZILIAN JOURNAL OF PHYSICS, 2017, 47 (02) : 145 - 150
[6] Optimization of hydrogenated amorphous silicon germanium thin films and solar cells deposited by hot wire chemical vapor deposition
Veldhuizen, L. W.
Van der Werf, C. H. M.
Kuang, Y.
Bakker, N. J.
Yun, S. J.
Schropp, R. E. I.
THIN SOLID FILMS, 2015, 595 : 226 - 230
[7] Effect of the Initial Structure on the Electrical Property of Crystalline Silicon Films Deposited on Glass by Hot-Wire Chemical Vapor Deposition
Chung, Yung-Bin
Lee, Sang-Hoon
Bae, Sung-Hwan
Park, Hyung-Ki
Jung, Jae-Soo
Hwang, Nong-Moon
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5947 - 5951
[8] Polycrystalline silicon thin films on glass by aluminum-induced crystallization
Nast, O
Brehme, S
Neuhaus, DH
Wenham, SR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) : 2062 - 2068
[9] Effect of aluminum supply on aluminum-induced crystallization of amorphous silicon at low temperature
Song, Rui
Liu, Yulong
Cao, Zexian
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 2009, 6 (03): : 663 - 668
[10] Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition
Alpuim, P.
Andrade, M.
Sencadas, V.
Ribeiro, M.
Filonovich, S. A.
Lanceros-Mendez, S.
THIN SOLID FILMS, 2007, 515 (19) : 7658 - 7661

← 1 2 3 4 5 →