Sn and Cu oxide nanoparticles deposited on TiO2 nanoflower 3D substrates by Inert Gas Condensation technique

被引：24

作者：

Kusior, A. ^{[1
]}

Kollbek, K. ^{[2
]}

Kowalski, K. ^{[3
]}

Borysiewicz, M. ^{[4
]}

Wojciechowski, T. ^{[5
]}

Adamczyk, A. ^{[1
]}

Trenczek-Zajac, A. ^{[1
]}

Radecka, M. ^{[1
]}

Zakrzewska, K. ^{[6
]}

机构：

[1] AGH Univ Sci & Technol, Fac Mat Sci & Ceram, Al Mickiewicza 30, PL-30059 Krakow, Poland

[2] AGH Univ Sci & Technol, Acad Ctr Mat & Nanotechnol, Al Mickiewicza 30, PL-30059 Krakow, Poland

[3] AGH Univ Sci & Technol, Fac Met Engn & Ind Comp Sci, Al Mickiewicza 30, PL-30059 Krakow, Poland

[4] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[5] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[6] AGH Univ Sci & Technol, Fac Comp Sci Elect & Telecommun, Al Mickiewicza 30, PL-30059 Krakow, Poland

来源：

APPLIED SURFACE SCIENCE | 2016年 / 380卷

关键词：

Inert Gas Condensation; TiO2; nanoflowers; Cu nanoclusters; SnO2; nanoparticles; PHOTOELECTROCHEMICAL CELLS; HETEROJUNCTIONS; PHOTOCATALYSTS; NANOCOMPOSITES; NANOSTRUCTURES; GENERATION; SCIENCE; RAMAN;

D O I：

10.1016/j.apsusc.2016.01.204

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sn and Cu oxide nanoparticles were deposited by Inert Gas Condensation (IGC) technique combined with dc magnetron sputtering onto nanoflower TiO2 3D substrates obtained in the oxidation process of Ti-foil in 30% H2O2. Sputtering parameters such as insertion length and Ar/He flow rates were optimized taking into account the nanostructure morphology. Comparative studies with hydrothermal method were carried out. Surface properties of the synthesized nanomaterials were studied by Scanning Electron Microscopy, SEM, Atomic Force Microscopy, AFM, and X-ray Photoelectron Spectroscopy, XPS. X-ray diffraction, XRD and Raman spectroscopy were performed in order to determine phase composition. Impedance spectroscopy demonstrated the influence of nanoparticles on the electrical conductivity. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：193 / 202

页数：10

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