Quantum Electron Transport in Ohmic Edge Contacts between Two-Dimensional Materials

In-plane edge contacts can achieve both minimal volume and low contact resistance to further shrink transistor dimensions and increase device performance. However, a quantitative understanding of their electron transport properties is still lacking. Here we present atomistic full-band self-consistent quantum transport simulations of the graphene/MoS2 edge contact using a Wannier-function basis. We find efficient tunneling of electrons resulting in ohmic behavior in its I-V characteristics, which agrees with experiments. Our results also demonstrate the role played by trapped charges in the formation of a Schottky barrier. Our framework can be extended conveniently to incorporate more general nanostructure geometries.